2

-resolved inverse photoemission spectroscopy

Year:
1995
Language:
english
File:
PDF, 372 KB
english, 1995
6

on GeS

Year:
1992
Language:
english
File:
PDF, 411 KB
english, 1992
19

Electronic structure of α and γ phases of Si(111)–3×3–Sn

Year:
2000
Language:
english
File:
PDF, 271 KB
english, 2000
22

High-temperature graphitization of the 6H-SiC (0001̄) face

Year:
1999
Language:
english
File:
PDF, 362 KB
english, 1999
30

 Interface formation through conduction-band electronic structure

Year:
1998
Language:
english
File:
PDF, 531 KB
english, 1998
32

Electronic and vibrational properties at the ZnPc/Ag(110) interface

Year:
2009
Language:
english
File:
PDF, 477 KB
english, 2009
33

3)

Year:
2011
Language:
english
File:
PDF, 264 KB
english, 2011
34

) probed through the unoccupied electronic states

Year:
2013
Language:
english
File:
PDF, 475 KB
english, 2013
37

reconstructions on Si(111)

Year:
2001
Language:
english
File:
PDF, 552 KB
english, 2001
38

: Cationic origin of the defect band-gap states

Year:
1990
Language:
english
File:
PDF, 790 KB
english, 1990
49

3 surface

Year:
2013
Language:
english
File:
PDF, 8.17 MB
english, 2013